Abstract
A novel technique is presented for contacting a surface doped region for high efficiency silicon solar cells. An external bias is applied to a metal-insulator-semiconductor structure containing a localised region of high doping. Dielectric breakdown results creating a low resistance ohmic contact. This method is self aligned, low tech, performed at room temperature and is conducive to advanced surface and bulk passivation techniques. A range of dielectrics have been successfully used including PECVD a-Si or SiNx and ALD Al2O3. This presentation will cover the development in understanding of the breakdown mechanism and progress in transferring it to an industrially viable manufacturing process.
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Brief Bio
Ned Western received his Bachelor of Photovoltaics and Solar Energy Engineering with first class honours from the University of New South Wales in 2010. Currently he is a PhD candidate at UNSW conducting research into high efficiency and low cost photovoltaics. He currently holds one patent. His areas of research include a rear contacting technique for 1st generation silicon solar cells and hydrogenation of Si bulk using gold as a defect marker.
