Hao Xin (46min)

Nanjing University of Posts and Telecommunications

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Abstract

Fabrication of kesterite Cu₂ZnSn(S,Se)₄ (CZTSSe) and chalcopyrite Cu(In,Ga)(S,Se)₂ (CIGSSe) thin film materials from solution is a promising lost-cost alternative route compared to vacuum-based approaches. However, the importance of solution chemistry was not been paid much attention. In this talk I will present our progress on solution processed low band gap Se-rich CZTSSe and CIGSSe, and wide band gap sulfide CZTS and CIGS thin film solar cells and how solution chemistry determine absorber property and its photovoltaic performance. We have found that by selecting proper precursor compounds to control solution chemical reactions, secondary phases can be minimized and single-phase crystallization reaction path can be realized, which produces less defective CZTSSe and CIGSSe absorber materials and importantly offers platform for further mitigation of heterojunction interface property. These efforts lead to record efficiency CZTSSe and CIGSSe single junction solar cells and CZTSSe minimodule.

Brief Bio

Hao Xin is a professor in College of Chemistry and Life Sciences at Nanjing University of Posts and Telecommunications. She received her Ph.D. of Inorganic Chemistry from Peking University in 2003. From 2003 to 2006, she worked as a Japan Science and Technology Agency (JST) CREST researcher at National Institute of Material Sciences (NIMS) and a JSPS fellow at Japan Advanced Institute of Science and Technology (JAIST). Then she worked a research scientist in the Department of Chemical Engineering, University of Washington until she moved back China in 2015. Her current research focuses on solution chemical engineering for efficient kesterite and chalcopyrite thin film solar cell.